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Quoted By: >>10314315 >>10314335
IGBT stands for insulated-gate bipolar transistor.
It is a power transistor that combines an input MOS and an output bipolar transistor. A P region is formed on the drain side of the MOSFET. The resistivity of the high-resistance N- drift region decreases when holes are injected from this P region at turn-on. This phenomenon is called conductivity modulation. Consequently, an IGBT is a switching transistor with low ON voltage even at high breakdown voltage.
Although its internal equivalent circuit is complicated, it can be simplified as consisting of an N-channel MOSFET with variable on-resistance and a diode connected in series.
It is a power transistor that combines an input MOS and an output bipolar transistor. A P region is formed on the drain side of the MOSFET. The resistivity of the high-resistance N- drift region decreases when holes are injected from this P region at turn-on. This phenomenon is called conductivity modulation. Consequently, an IGBT is a switching transistor with low ON voltage even at high breakdown voltage.
Although its internal equivalent circuit is complicated, it can be simplified as consisting of an N-channel MOSFET with variable on-resistance and a diode connected in series.
